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| SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications * * * Small Package Low on Resistance : Ron = 0.4 (max) (VGS = -4 V) : Ron = 0.6 (max) (VGS = -2.5 V) Low Gate Threshold Voltage Unit in mm Maximum Ratings (Ta = 25C) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note2) PD (Note1) Tch Tstg Rating -30 10 -1.7 -3.4 1250 150 -55~150 A Unit V V Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range mW C C Note1: Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm , t = 10 s) Note2: The pulse width limited by max channel temperature. 2 JEDEC EIAJ TOSHIBA Weight: 10 mg 2-3S1A Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. 000707EAA1 * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-08-17 1/4 SSM3J01T Marking 3 Equivalent Circuit 3 DE 1 2 1 2 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 10 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -0.85 A ID = -0.85 A, VGS = -4 V ID = -0.85 A, VGS = -2.5 V (Note3) (Note3) (Note3) Min -30 -0.6 1.2 Typ. 2.3 0.3 0.4 240 24 94 36 37 Max 1 -1 -1.1 0.4 0.6 Unit A V A V S pF pF pF ns VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -15 V, ID = -0.3 A VGS = 0~-2.5 V, RG = 4.7 Note3: Pulse test Switching Time Test Circuit (a) Test circuit 0 IN RG -2.5 V 10 S VDD OUT VDD = -15 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25C (b) VIN VGS 0V 10% -2.5 V VDS (ON) 90% (c) VOUT VDS 90% 10% VDD ton tr toff tf Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product. 2000-08-17 2/4 SSM3J01T ID - VDS -2 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -0.5 -1 -1.6 V VGS = -1.4 V -1.5 -2 -0.01 0 -0.5 -1 -1.8 V Common Source -4 V -2.5 V -2.2 V Ta = 25C -1000 -10000 Common Source VDS = -3 V ID - VGS (mA) Drain current ID (A) Drain current ID -2.0 V -100 Ta = 100C -25C 25C -1 -10 -0.1 -1.5 -2 -2.5 -3 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) - ID 1 Common Source Ta = 25C 0.8 0.8 1 Common Source ID = -0.85 A RDS (ON) - Ta Drain-Source on resistance RDS (ON) () Drain-Source on resistance RDS (ON) () 0.6 VGS = - 2.5 V 0.4 -4 V 0.2 0.6 VGS = -2.5 V 0.4 -4 V 0.2 0 0 -0.5 -1 -1.5 -2 0 0 50 100 150 Drain current ID (A) Ambient temperature Ta (C) |Yfs| - ID 100 Common Source VDS = -3 V Ta = 25C 1000 C - VDS Forward transfer admittance |Yfs| (S) (pF) 10 Ciss 100 Coss 1 Capacitance C Crss 10 0.1 Common Source VGS = 0 f = 1 MHz Ta = 25C -1 -10 -100 0.01 -0.001 -0.01 -0.1 -1 -10 1 -0.1 Drain current ID (A) Drain-Source voltage VDS (V) 2000-08-17 3/4 SSM3J01T t - ID 10000 Common Source VDD = -15 V VGS = 0~-2.5 V RG = 4.7 1.5 t = 10 s PD - Ta Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm (W) Drain power dissipation PD 1.25 Switching time t (ns) 1000 Ta = 25C 1 0.75 DC toff 100 tf ton tr -0.01 -01 -1 0.5 0.25 0 0 25 50 75 100 125 150 10 -0.001 Ambient temperature Ta (C) Drain current ID (A) -10 Safe operating area ID max (pulsed) 1 ms* ID max (continuous) 10 ms* -1 Drain current ID (A) 10 s* -0.1 DC operation Ta = 25C Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 -0.01 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25C Curves must be derated linearly with increase in temperature. -1 -10 VDSS max -100 -0.001 -0.1 Drain-Source voltage VDS (V) rth - tw 1000 Transient thermal impedance rth (C /W) 100 10 Single pulse Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) 2000-08-17 4/4 |
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